WSe₂ (Tungsten Diselenide)是一種半導體層狀材料。層間相互作用為范德華（van der Waals）相互作用。它是間接帶隙半導體，帶隙大小約為1.3 eV。但是單層的WSe2是直接帶隙半導體。二硒化鎢屬于第六族過渡金屬二鹵化物（TMDC）。我們提供的WSe₂直徑8 -10 mm，未摻雜的是p型半導體，室溫下載流子濃度約為1015 cm-3量級。我們也提供Re摻雜的n型WSe₂

WSe₂ crystal properties

Crystal size	~10 mm
Electrical properties	Semiconductor, p-type (we also have n-type available)
Crystal structure	hexagonal
Unit cell parameters	a = b = 0.328 nm, c = 1.298 nm, α = β = 90°, γ = 120°
Monolayer properties	Link to C2DB containing calculated properties
Type	Synthetic
Purity	>99.995 %
Characterized by	XRD, Raman, EDX, Hall measurement